Rotated field effect transistor topology amplifier

A method for amplification using a rotated topology, comprising the steps of:

• transferring an input signal in an input wire at a first side of a unit cell in a first stage along an axis toward a plurality of field effect transistors of said unit cell, wherein said input signal comprises a millimeter-wave signal;
• generating in said unit cell a pair of intermediate signals in a pair of intermediate wires by amplifying said input signal using said field effect transistors, wherein (i) a plurality of gates of said field effect transistors are configured to receive said input signal, (ii) a topology of said gates are rotated to be perpendicular to said axis and (iii) said field effect transistors are located in two rows mirrored about said axis;
• transferring said intermediate signals in a single direction parallel to said axis toward a second side of said unit cell opposite said first side;
• transferring said intermediate signals toward each other;
• generating an output signal of said unit cell by combining said intermediate signals;
• transferring said output signal parallel to said axis and away from said field effect transistors along an output wire at said second side of said unit cell;
• amplifying said output signal of said first stage in a plurality of said unit cells arranged in parallel in a second stage, wherein all of said input wires of said unit cells in said second stage are coupled to said output wire of said unit cell in said first stage;
• and
• amplifying said output signals of said second stage in a plurality of said unit cells arranged in parallel in a third stage, wherein each of said input wires of said unit cells in said third stage are coupled at most to a single of said output wires of said unit cells in said second stage.