Switching device
AssigneeRohm Co., Ltd.
InventorsYuki Nakano, Hiroyuki Sakairi
Life of this patent
Estimating the term…
Abstract
A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
Claims18
A switching device for switching a load by on-off control of voltage, comprising:
- an SiC semiconductor layer where a current path is formed by on-control of the voltage;
- a first electrode arranged to be in contact with the SiC semiconductor layer;
- and
- a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, wherein
- the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path,
- the first electrode includes a contact portion arranged between the variable resistance portion and the SiC semiconductor layer to be in contact with the SiC semiconductor layer, and
- the variable resistance portion is made of a conductive barium titanate-based compound.
A switching device for switching a load by on-off control of voltage, comprising:
- an SiC semiconductor layer where a current path is formed by on-control of the voltage;
- a first electrode arranged to be in contact with the SiC semiconductor layer;
- and
- a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, wherein
- the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path,
- the first electrode includes a contact portion arranged between the variable resistance portion and the SiC semiconductor layer to be in contact with the SiC semiconductor layer, and
- the variable resistance portion is for limiting the density of the overcurrent to not more than 2000 A/cm2 within 2 μsec from a time when the overcurrent starts flowing to the current path.
Dependencies are inferred from the claim text.