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US 9,865,993 B2Granted
Lasers with beam-shape modification
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsCristian Stagarescu, Alex A. Behfar, Norman Sze-keung Kwong
Life of this patent
Estimating the term…
Abstract
A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
Claims20
A packaged semiconductor laser device, comprising:
- a substrate having a substrate surface;
- an epitaxial laser on the substrate surface, said epitaxial laser having an etched facet;
- and
- a metal can package encompassing said substrate and said epitaxial laser;
- wherein said substrate extends outwardly from said etched facet to form a patio comprising an exposed reflective surface and a plurality of steps formed therein, wherein said plurality of steps comprises a first step having a step surface abutting said etched facet, wherein said plurality of steps further comprises one or more subsequent steps each having a step surface substantially parallel with said substrate surface;
- wherein each subsequent step outwardly from said etched facet extends further into said substrate such that light emitted from said epitaxial laser is reflected off said exposed reflective surface of at least one of said plurality of steps to modify a vertical far field of said epitaxial laser.
3 more elements
A packaged semiconductor laser device, comprising:
- a substrate having a substrate surface;
- an epitaxial laser on said substrate, said epitaxial laser having an etched facet;
- a patio extending outwardly from said etched facet, said patio having an exposed reflective surface and a plurality of steps formed therein, wherein said plurality of steps comprises a first step having a step surface abutting said etched facet, wherein said plurality of steps further comprises one or more subsequent steps each having a step surface substantially parallel with said substrate surface;
- wherein each subsequent step outwardly from said etched facet extends further into said substrate such that light emitted from said epitaxial laser is reflected off of said exposed reflective surface of at least one of said plurality of steps to modify a vertical far field of said epitaxial laser;
- and
- a metal can package encompassing said substrate, said epitaxial laser, and said patio.
3 more elements
A packaged semiconductor laser device, comprising:
- a substrate;
- an epitaxial laser on a surface of said substrate, said epitaxial laser having an etched facet, said etched facet having a surface at an angle other than 90° to said surface of said substrate;
- a structure adjacent said etched facet, said structure having at least two opposing reflective surfaces extending outwardly from said etched facet, wherein said at least two opposing reflective surfaces are positioned relative to said etched facet such that light emitted from said epitaxial laser is reflected off of said at least two opposing reflective surfaces to modify a vertical far field of said epitaxial laser;
- and
- a metal can package encompassing said substrate, said epitaxial laser, and said structure.
2 more elements
A packaged hybrid assembly, comprising:
- a base with an exposed reflective surface of a patio having a downwards staircase with a plurality of steps, wherein said plurality of steps comprises a first step having a step surface and one or more subsequent steps each having a step surface;
- wherein said first step extends into said base from a top surface of said base and each subsequent step extends further into said base;
- a laser with an active layer and at least one cleaved facet, wherein said laser is mounted on said top surface of said base;
- and
- a metal can package encompassing said base and said laser;
- wherein said at least one cleaved facet is positioned adjacent to said exposed reflective surface of said first step such that light emitted from said laser is reflected off of said exposed reflective surface of said plurality of steps to modify a vertical far field of said laser.
3 more elements
Dependencies are inferred from the claim text.