Organic thin film transistor, method for manufacturing the same and method for recoverying insulation thereof

A method for manufacturing an organic thin film transistor, the method comprising:

• forming a gate electrode on a substrate;
• forming a sulfur copolymer thin film on the substrate so as to cover the gate electrode;
• forming a semiconductor pattern on the sulfur copolymer thin film so as to at least partially overlap the gate electrode;
• and
• forming a source electrode at least partially overlapping a first end of the semiconductor pattern, and forming a drain electrode at least partially overlapping a second end of the semiconductor pattern distinct from the first end of the semiconductor pattern,
• wherein the sulfur copolymer thin film has more disulfide bonds than carbon-sulfur bonds.

A method for recovering insulation of an organic thin film transistor that includes a source electrode and a drain electrode disposed on a substrate, a semiconductor pattern electrically connected to the source electrode and the drain electrode, a gate insulation layer electrically insulating the semiconductor pattern, and a gate electrode insulated with the semiconductor pattern having the gate insulation layer provided in between, the method comprising:

• etching a top electrode on the gate insulation layer;
• heat treating the top electrode-removed gate insulation layer;
• and
• forming the top electrode again on the heat-treated gate insulation layer,
• wherein the gate insulation layer is a sulfur copolymer thin film,
• wherein the sulfur copolymer thin film has more disulfide bonds than carbon-sulfur bonds, and
• wherein the top electrode includes at least any one of the source electrode, the drain electrode and the gate electrode.