Resistive memory cell having a single bottom electrode and two top electrodes

An memory device comprising:

• a plurality of bottom electrodes formed on a substrate;
• a plurality of oxide regions, each oxide region being arranged on top of and covering a top surface of one of the bottom electrodes, respectively;
• wherein each bottom electrode has a pointed tip region proximate the oxide region;
• wherein with respect to each bottom electrode:
• a first electrolyte region and first top electrode is formed over a first portion of the pointed tip region of the bottom electrode, with the first electrolyte region arranged between the first top electrode and the first portion of the pointed tip region of the bottom electrode to define a first memory element;
• and
• a second electrolyte region and second top electrode is formed over a second portion of the pointed tip region of the bottom electrode, with the second electrolyte region arranged between the second top electrode and the second portion of the pointed tip region of the bottom electrode to define a second memory element.

A memory cell comprising:

• a bottom electrode formed on a substrate;
• an oxide region covering a top surface of the bottom electrode
• and deforming the top surface of the bottom electrode such that the bottom electrode has a pointed tip region proximate the oxide region;
• a first electrolyte region and first top electrode formed over a first portion of the pointed tip region of the bottom electrode, with the first electrolyte region arranged between the first top electrode and the first portion of the pointed tip region of the bottom electrode to define a first memory element;
• and
• a second electrolyte region and second top electrode over a second portion of the pointed tip region of the bottom electrode, with the second electrolyte region is arranged between the second top electrode and the second portion of the pointed tip region of the bottom electrode to define a second memory element.