Nonvolatile resistance change element
AssigneeToshiba Memory Corporation
InventorsHidenori Miyagawa, Akira Takashima, Shosuke Fujii
Life of this patent
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Abstract
According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode and a first layer. The first electrode includes a metal element. The second electrode includes an n-type semiconductor. The first layer is formed between the first electrode and the second electrode and includes a semiconductor element. The first layer includes a conductor portion made of the metal element. The conductor portion and the second electrode are spaced apart.
Claims17
A nonvolatile resistance change element comprising:
- a first electrode comprising a metal element;
- a second electrode comprising an n type semiconductor;
- a first layer provided between the first electrode and the second electrode, the first layer including a conductor portion made of the metal element, and the conductor portion and the second electrode being spaced apart;
- and
- a second layer provided between the first layer and the second electrode, and which is in contact with the first layer and the second electrode,
- wherein the first layer and the second layer are made of silicon oxide, or the first layer and the second layer are made of silicon nitride, or the first layer and the second layer are made of silicon oxynitride, and
- wherein the second layer differs from the first layer in one of a density, a number of dangling bonds, or a number of defects.
A nonvolatile resistance change element comprising:
- a first electrode comprising a metal element;
- a second electrode comprising an n-type semiconductor;
- a first layer provided between the first electrode and the second electrode;
- and
- a second layer provided between the first layer and the second electrode,
- wherein the first layer and the second layer are made of silicon oxide, or the first layer and the second layer are made of silicon nitride, or the first layer and the second layer are made of silicon oxynitride, and
- wherein the second layer differs from the first layer in one of a density, a number of dangling bonds, or a number of defects,
- wherein a reset operation of changing a low-resistance state to a high-resistance state is performed by a reset voltage to be applied between the first electrode and the second electrode, and
- when a voltage is swept from 0 V to the reset voltage between the first electrode and the second electrode, a maximum value of a current change amount between a 1/10 voltage of the reset voltage and the reset voltage is not more than an order of magnitude.
A nonvolatile resistance change element comprising:
- a first electrode comprising a metal element;
- a second electrode comprising an n-type semiconductor layer;
- and
- a first layer provided between the first electrode and the second electrode;
- and
- a second layer provided between the first layer and the second electrode,
- wherein the first layer and the second layer are made of silicon oxide, or the first layer and the second layer are made of silicon nitride, or the first layer and the second layer are made of silicon oxynitride, and
- wherein the second layer differs from the first layer in one of a density, a number of dangling bonds, or a number of defects,
- wherein a reset operation of changing a low-resistance state to a high-resistance state is performed by a reset voltage to be applied between the first electrode and the second electrode, and
- when a voltage is swept from 0 V to the reset voltage between the first electrode and the second electrode, a maximum value of a current change amount between 0 V and a ½ voltage of the reset voltage is smaller than that of a current change amount between the ½ voltage of the reset voltage and the reset voltage.
Dependencies are inferred from the claim text.