Threshold switching device and electronic device including the same

A threshold switching device comprising:

• a first electrode layer;
• a second electrode layer;
• and
• an insulating layer interposed between the first and second electrode layers, and including a plurality of neutral defects,
• wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects, and
• wherein the insulating layer comprises a first end part corresponding to a region that is within a first distance from an interface between the first electrode layer and the insulating layer, a second end part corresponding to a region that is within a second distance from an interface between the second electrode layer and the insulating layer, and a central part corresponding to a region disposed between the first and second end parts,
• the first end part comprises a first interface part corresponding to a region that is within a third distance from the interface between the first electrode layer and the insulating layer, the third distance being smaller than the first distance,
• the second end part comprises a second interface part corresponding to a region that is within a fourth distance from the interface between the second electrode layer and the insulating layer, the fourth distance being smaller than the second distance,
• the first and second interface parts are substantially free from neutral defects, and
• the density of neutral defects in each of the first and second end parts except the first and second interface parts is higher than the density of neutral defects in the central part.

An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:

• a memory element storing data;
• and
• a selecting element coupled to the memory element, and controlling access to the memory element,
• wherein the selecting element comprises:
• a first electrode layer;
• a second electrode layer;
• and
• an insulating layer interposed between the first and second electrode layers, and including a plurality of neutral defects, and
• wherein the selecting element has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

The electronic device according of 13, further comprising a data storage system which includes:

• a storage device configured to store data and conserve stored data regardless of power supply;
• a controller configured to control input and output of data to and from the storage device according to a command inputted form an outside;
• a temporary storage device configured to temporarily store data exchanged between the storage device and the outside;
• and
• an interface configured to perform communication between at least one of the storage device, the controller and the temporary storage device and the outside,
• wherein the semiconductor memory is part of the storage device or the temporary storage device in the data storage system.