Electronic device and method for fabricating the same

An electronic device comprising semiconductor memory, wherein the semiconductor memory includes:

• a substrate;
• an interlayer dielectric layer disposed over the substrate, and having a recess which exposes a portion of the substrate;
• a bottom contact filled in a lower portion of the recess;
• an under layer disposed over the bottom contact and fills a remaining portion of the recess;
• a free layer disposed over the under layer and having a variable magnetization direction;
• a tunnel barrier layer disposed over the free layer;
• and
• a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and
• wherein the free layer includes:
• a first ferromagnetic material;
• a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material;
• and
• an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.