Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorSeung-Mo Noh
Life of this patent
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Abstract
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a free layer comprising CoFeGeB alloy, and having a changeable magnetization direction that is perpendicular to the free layer; a tunnel barrier layer positioned over the free layer, and configured for enabling electron tunneling; a pinned layer positioned over the tunnel barrier layer, and having a pinned magnetization direction that is perpendicular to the pinned layer; and a bottom layer positioned under the free layer, and having a B2 structure to improve a perpendicular magnetic crystalline anisotropy of the free layer.
Claims19
An electronic device comprising a semiconductor memory,
- wherein the semiconductor memory comprises:
- a free layer comprising CoFeGeB alloy, and having a changeable magnetization direction that is perpendicular to the free layer;
- a tunnel barrier layer positioned over the free layer, and configured for enabling electron tunneling;
- a pinned layer positioned over the tunnel barrier layer, and having a pinned magnetization direction that is perpendicular to the pinned layer;
- and
- a bottom layer positioned under the free layer and including a material having a caesium chloride (B2) structure and in direct contact with the CoFeGeB alloy to improve a perpendicular magnetic crystalline anisotropy of the free layer.
Dependencies are inferred from the claim text.