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US 9,865,800 B2Granted
Magnetic memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsShinhee Han, Kilho Lee, Yoonjong Song
Life of this patent
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Abstract
Magnetic memory devices are provided. A magnetic memory device includes a Magnetic Tunnel Junction (MTJ) structure on a contact. Moreover, the magnetic memory device includes an insulating structure and an electrode between the MTJ structure and the contact. In some embodiments, a first contact area of the electrode with the MTJ structure is smaller than a second contact area of the insulating structure with the MTJ structure.
Claims20
A magnetic memory device, comprising:
- a lower insulating layer on a substrate;
- an insulating structure on the lower insulating layer;
- a lower contact in the lower insulating layer;
- a lower electrode in the insulating structure and electrically connected to the lower contact;
- and
- a magnetic tunnel junction pattern in contact with at least a portion of a top surface of the insulating structure and at least a portion of a top surface of the lower electrode,
- wherein the lower electrode comprises a bottom portion and a protruding portion protruding from a top surface of the bottom portion toward the magnetic tunnel junction pattern,
- wherein at least a portion of the top surface of the bottom portion of the lower electrode is in contact with the insulating structure.
5 more elements
A magnetic memory device, comprising:
- a lower insulating layer on a substrate;
- a lower contact in the lower insulating layer;
- a first insulating pattern on the lower insulating layer and comprising a gap overlying the lower contact;
- a lower electrode in the gap, on the lower contact and on a side surface of the first insulating pattern;
- a second insulating pattern in the gap, on the lower electrode;
- and
- a magnetic tunnel junction pattern in contact with at least a portion of a top surface of each of the lower electrode, the first insulating pattern, and the second insulating pattern.
4 more elements
A magnetic memory device comprising:
- first and second contacts;
- a Magnetic Tunnel Junction (MTJ) structure between the first and second contacts, the MTJ structure comprising a tunnel barrier layer between first and second magnetic layers;
- an insulating structure between the MTJ structure and one of the first and second contacts;
- and
- an electrode between the MTJ structure and the one of the first and second contacts,
- wherein a first contact area of the electrode with the MTJ structure is smaller than a second contact area of the insulating structure with the MTJ structure,
- wherein the electrode includes a base portion and a protruding portion protruding from the base portion toward the MTJ structure, and
- wherein the electrode contacts the one of the first and second contacts with a third contact area that is larger than the first contact area.
5 more elements
Dependencies are inferred from the claim text.