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US 9,865,798 B2Granted
Electrode structure for resistive memory device
AssigneeQUALCOMM Incorporated
InventorsYu Lu, Junjing Bao, Xia Li, Seung Hyuk Kang
Life of this patent
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Abstract
A semiconductor device includes an interconnect layer and a bottom electrode of a resistive memory device. The bottom electrode is coupled to the interconnect layer, and the bottom electrode is comprised of cobalt tungsten phosphorus (CoWP).
Claims30
A semiconductor device comprising:
- a conductive barrier layer;
- an interconnect;
- a capping layer of dielectric material between the interconnect and the conductive barrier layer, at least a portion of the capping layer in contact with the interconnect;
- and
- an electrode of a resistive memory device, the electrode interposed between the interconnect and the conductive barrier layer, the electrode comprised of cobalt tungsten phosphorus (CoWP), wherein the conductive barrier layer has a first portion overlapping a top surface of the electrode and the capping layer and a second portion overlapping a side surface of the capping layer, wherein the second portion is perpendicular to the first portion and a height of the second portion is greater than a height of the electrode in a direction perpendicular to the top surface.
2 more elements
A semiconductor device comprising:
- a capping layer of dielectric material adjacent an interconnect and interposed between the interconnect and a conductive barrier layer;
- and
- an electrode adjacent the interconnect and interposed between the interconnect and the conductive barrier layer, the electrode comprising cobalt tungsten phosphorus (CoWP) and included in a resistive memory device, wherein the conductive barrier layer has a first portion overlapping a top surface of the electrode and the capping layer and a second portion overlapping a side surface of the capping layer, wherein the second portion is perpendicular to the first portion and a height of the second portion is greater than a height of the electrode in a direction perpendicular to the top surface.
Dependencies are inferred from the claim text.