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US 9,865,786 B2Granted
Method of manufacturing structures of LEDs or solar cells
AssigneeSoitec
InventorPascal Guenard
Life of this patent
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Abstract
The disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.
Claims13
A wafer structure, comprising:
- LED or photovoltaic elemental structures, each of the LED or photovoltaic elemental structures comprising at least one p-type layer, an active zone and an n-type layer, wherein at least one of, but less than all of, the p-type layer, the active zone, and the n-type layer of the LED or photovoltaic elemental structures comprise regions of a common layer extending continuously across the wafer structure between and through all of the LED or photovoltaic elemental structures;
- a metal layer extending continuously over the LED or photovoltaic elemental structures;
- a transfer substrate bonded to the LED or photovoltaic elemental structures by direct molecular adhesion bonding along a bonding interface extending continuously between the transfer substrate and the LED or photovoltaic elemental structures, the bonding interface located within or at a surface of the metal layer;
- and
- insulating material disposed in trenches located between the LED or photovoltaic elemental structures, the trenches extending entirely through the p-type layer or the n-type layer and only partially, but not entirely, through the active layer.
2 more elements
Dependencies are inferred from the claim text.