Light emitting device and lighting apparatus having same

A light emitting device comprising:

• a light emitting structure layer including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed under the first conductivity type semiconductor layer and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
• a first electrode electrically connected to the first conductivity type semiconductor layer;
• a contact layer disposed under the second conductivity type semiconductor layer and formed of a conductive material;
• a reflective layer disposed under the contact layer;
• a capping layer disposed under the reflective layer;
• and
• a conductive support member disposed under the capping layer,
• wherein a thickness of the reflective layer is greater than that of the second conductivity type semiconductor layer and is 90 or more times that of the contact layer,
• wherein a lower surface of the reflective layer includes a plurality of protrusion portions and a plurality of recesses disposed between the plurality of protrusion portions,
• wherein the lower surface of the reflective layer includes an uneven structure with respect to a horizontal top surface of the conductive support member,
• wherein the thickness of the reflective layer is greater than 15 or more times that of the capping layer, and
• wherein a depth of each of the recesses is less than 50% of the thickness of the reflective layer.