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US 9,865,777 B2Granted
Semicondcutor light-emitting device and fabricating method thereof
AssigneeChipMOS Technologies Inc.
InventorsTung-Bao Lu, Tzu-Han Hsu
Life of this patent
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Abstract
A semiconductor light-emitting device including a light-emitting diode chip and an electrode disposed thereon is provided. The electrode at least includes a plated silver alloy (Ag1-xYx) layer, wherein the Y of the Ag1-xYx layer includes metals forming a complete solid solution with Ag at arbitrary weight percentage, and the X of the Ag1-xYx layer is in a range from about 0.02 to 0.15. The fabricating method thereof is also provided.
Claims10
A semiconductor light-emitting device, comprising:
- a light-emitting diode chip;
- and
- an electrode, disposed on the light-emitting diode chip, the electrode at least comprising:
- a plated silver alloy (Ag1-xYx) layer, wherein the Y of the Ag1-xYx layer comprises metals forming a complete solid solution with Ag at predetermined weight percentage, and the X of the Ag1-xYx layer is in a range from 0.02 to 0.15;
- an adhesive layer, disposed between the light-emitting diode chip and the Ag1-xYx layer;
- and
- a seed layer, disposed between the adhesive layer and the Ag1-xYx layer.
4 more elements
A fabricating method of a semiconductor light-emitting device, comprising:
- providing a light-emitting diode chip;
- forming a patterned photoresist layer on the light-emitting diode chip, the patterned photoresist layer having an opening, the opening exposing a surface of the light-emitting diode chip;
- and
- forming a plated silver alloy (Ag1-xYx) layer in the opening by an electroplating process, wherein the Y of the Ag1-xYx layer comprises metals forming a complete solid solution with Ag at predetermined weight percentage and the X of the Ag1-xYx layer is in a range from 0.02 to 0.15, such that the Ag1-xYx layer is located on the light-emitting diode chip and electrically connected with the light-emitting diode chip.
1 more element
Dependencies are inferred from the claim text.