Semiconductor light emitting device
AssigneeNichia Corporation
InventorsIsamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Abstract
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
Claims20
A semiconductor light emitting diode comprising:
- a sapphire substrate;
- a plurality of semiconductor layers formed on said sapphire substrate and made of different materials from that of said sapphire substrate;
- and
- an ohmic electrode formed on the surface of the top layer of said semiconductor layers so that light generated in said semiconductor layers is emitted from said ohmic electrode or from said sapphire substrate;
- wherein protruding portions for scattering or diffracting light generated in said semiconductor layers are created in a repeated pattern in the surface of said sapphire substrate, and said protruding portions have a side face that is inclined to a laminating direction of said semiconductor layers with a taper angle of more than 105 degrees and not more than 160 degrees.
Dependencies are inferred from the claim text.