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US 9,865,772 B2Granted
LED structures for reduced non-radiative sidewall recombination
AssigneeApple Inc.
InventorsDavid P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
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Abstract
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Claims18
A light emitting diode (LED) comprising:
- a p-n diode layer including:
- a top doped layer doped with a first dopant type;
- a bottom doped layer doped with a second dopant type opposite the first dopant type;
- and
- an active layer between the top doped layer and the bottom doped layer, the active layer comprising a quantum well layer between quantum barrier layers, wherein the quantum well layer is under biaxial tension.
2 more elements
A light emitting diode (LED) comprising:
- a mesa structure including:
- a first bottom cladding layer;
- a spacer layer over the first bottom cladding layer;
- a second bottom cladding layer over the spacer layer;
- an active layer over the second cladding layer;
- and
- a top cladding layer over the active layer;
- and
- a pillar structure below the first bottom cladding layer, wherein the pillar structure is in direct contact with the first bottom cladding layer, is centrally located at, and protrudes from the first bottom cladding layer.
6 more elements
Dependencies are inferred from the claim text.