Semiconductor light-emitting element
AssigneesQd Laser, Inc., The University of Sheffield
InventorsKenichi Nishi, Takeo Kageyama, Keizo Takemasa, Mitsuru Sugawara, Richard Hogg, Siming Chen
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Abstract
A semiconductor light-emitting element includes: a lower clad layer 12 that is provided on a substrate 10; an active layer 20 that is provided on the lower clad layer 12 and includes a quantum well layer 24 and a plurality of quantum dots 28 sandwiching a second barrier layer 22b together with the quantum well layer 24; and an upper clad layer 14 that is provided on the active layer 20, wherein a distance D between the quantum well layer 24 and the plurality of quantum dots 28 is smaller than an average of distances X between centers of the plurality of quantum dots 28.
Claims18
A semiconductor light-emitting element comprising:
- a lower clad layer that is provided on a substrate;
- an active layer that is provided on the lower clad layer and includes a quantum well layer, a plurality of quantum dots, and a first barrier layer, the first barrier layer being sandwiched between the quantum well layer and the plurality of quantum dots;
- and
- an upper clad layer that is provided on the active layer,
- wherein a distance between the quantum well layer and the plurality of quantum dots is smaller than an average of distances between centers of the plurality of quantum dots.
Dependencies are inferred from the claim text.