Semiconductor light emitting element and method for manufacturing the same

A semiconductor light emitting element, comprising:

• an n-type semiconductor layer including a nitride semiconductor;
• a p-type semiconductor layer including a nitride semiconductor;
• and
• a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit emitting light with a peak wavelength of not less than 530 nm,
• the light emitting unit including an n-side barrier layer and a first light emitting layer,
• the first light emitting layer including
• a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer,
• a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer,
• a first AlGaN layer provided between the first well layer and the first barrier layer, the first AlGaN layer including Alx1Ga1-x1N (0.15≦x1≦1), and
• a first p-side InGaN layer provided between the first AlGaN layer and the first barrier layer, the first p-side InGaN including Inya1Ga1-ya1N (0<ya1≦0.1),
• a first n-side InGaN layer provided between the first p-side InGaN layer and the first AlGaN layer, the first n-side InGaN layer including Inyb1Ga1-yb1N (0<yb≦0.1),
• a first p-side nitride including layer provided between the first p-side InGaN layer and the first n-side InGaN layer, the first p-side nitride including layer including Inza1Ga1-za1N (0≦za1<ya1, 0≦za1<yb1), and
• a first n-side nitride including layer provided between the first n-side InGaN layer and the first AlGaN layer, the first n-side nitride including layer including Inzb1Ga1-zb1N (0≦zb1<ya1, 0≦zb1<yb1),
• wherein a thickness of the first p-side InGaN layer is substantially the same as a thickness of the first p-side nitride including layer.