Ultrafast light emitting diodes for optical wireless communications

A method of manufacturing a light emitting diode comprising:

• providing a substrate layer;
• laying a buffer layer disposed on the substrate layer;
• laying a charge transport layer disposed on the buffer layer, wherein the charge transport layer comprises a doped semiconductor in electrical contact with at least an electrode;
• laying a light emission layer disposed on the charge transport layer;
• and
• laying another charge transport layer disposed on the light emission layer, wherein the other charge transport layer has a plurality of periodically spaced channels, wherein the plurality of periodically spaced channels are etched into the other charge transport layer,
• wherein the plurality of periodically spaced channels are etched through the other charge transport layer to leave a residual thickness of the other charge transport layer between a bottom of the etched channel and the light emission layer, and wherein another electrode is in electrical contact with the other charge transport layer;
• and
• laying a metamaterial contained in the plurality of periodically spaced channels, wherein the metamaterial is proximate to the residual thickness of the other charge transport layer, wherein the metamaterial comprises a structure including at least one of a dielectric or a metal,
• wherein the laying the charge transport layer, the laying the light emission layer, the laying another charge transport layer, and the laying a metamaterial layer are performed in a semiconductor fabrication process.