Merged P-i-N Schottky structure

A method for manufacturing a semiconductor device comprising:

• forming a plurality of P+ doped diffusion stripes in an N− doped silicon substrate, wherein each of said plurality of P+ doped diffusion stripes extends a first depth into said N− doped silicon substrate;
• spacing each of said plurality of P+ doped diffusion stripes from another stripe of said plurality of P+ doped diffusion stripes a distance selected such that said semiconductor device exhibits the same reverse avalanche energy absorption characteristics as a Fast Recovery Epitaxial Diode having a diffusion of a depth higher than said first depth;
• and
• forming a schottky contact layer over said N− doped silicon substrate, wherein said schottky contact layer is in contact with said plurality P+ doped diffusion stripes and regions of said N− doped silicon substrate disposed between said plurality of P+ doped diffusion stripes.

A method for manufacturing a semiconductor device comprising:

• forming a plurality of stripes of a first conductivity type in a semiconductor body of a second conductivity, wherein each stripe of said plurality of stripes extends a first depth into said semiconductor body;
• spacing each of said plurality of stripes of said first conductivity type from another stripe of said first conductivity type a distance selected such that said semiconductor device exhibits the same reverse avalanche energy absorption characteristics as a Fast Recovery Epitaxial Diode having a diffusion of a depth higher than said first depth, and
• wherein said spacing each of said plurality of stripes improves an ability of said semiconductor device to withstand breakdown under reverse bias conditions;
• and
• forming a schottky contact layer over said semiconductor body, wherein said schottky contact layer is in contact with said plurality of stripes of said first conductivity and regions of said second conductivity type disposed between said stripes of said first conductivity.