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US 9,865,744 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
Life of this patent
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Abstract
The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.
Claims41
A semiconductor device comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- an oxide semiconductor layer over the first insulating layer;
- a source electrode over and electrically connected to the oxide semiconductor layer;
- a drain electrode over and electrically connected to the oxide semiconductor layer;
- a second insulating layer over the oxide semiconductor layer;
- and
- a second conductive layer over the second insulating layer,
- wherein the oxide semiconductor layer comprises:
- a first region that is in contact with one of the source electrode and the drain electrode and overlaps with the first conductive layer and the second conductive layer;
- a second region that is not in contact with any of the source electrode and the drain electrode and overlaps with the first conductive layer and the second conductive layer;
- a third region that is not in contact with any of the source electrode and the drain electrode, overlaps with the first conductive layer, and does not overlap with the second conductive layer;
- and
- a fourth region that is in contact with the other of the source electrode and the drain electrode, overlaps with the first conductive layer, and does not overlap with the second conductive layer,
- wherein an end portion of the second conductive layer overlaps with the one of the source electrode and the drain electrode, and
- wherein the source electrode and the drain electrode are each in contact with a side surface of the oxide semiconductor layer.
13 more elements
A semiconductor device comprising:
- a transistor comprising:
- an oxide semiconductor layer;
- a source electrode over the oxide semiconductor layer;
- a drain electrode over the oxide semiconductor layer;
- a gate insulating layer over the oxide semiconductor layer;
- and
- a gate electrode over the gate insulating layer,
- wherein the oxide semiconductor layer comprises a portion not overlapping with any of the source electrode, the drain electrode, and the gate electrode,
- wherein the portion is positioned between the source electrode and the drain electrode, and
- wherein the source electrode and the drain electrode are each in contact with a side surface of the oxide semiconductor layer.
7 more elements
A semiconductor device comprising:
- a transistor comprising:
- a first gate electrode;
- a first gate insulating layer over the first gate electrode;
- an oxide semiconductor layer over the first gate insulating layer;
- a source electrode over the oxide semiconductor layer;
- a drain electrode over the oxide semiconductor layer;
- a second gate insulating layer over the oxide semiconductor layer;
- and
- a second gate electrode over the second gate insulating layer,
- wherein the oxide semiconductor layer comprises a portion not overlapping with any of the source electrode, the drain electrode, and the second gate electrode,
- wherein the portion is positioned between the source electrode and the drain electrode, and
- wherein the source electrode and the drain electrode are each in contact with a side surface of the oxide semiconductor layer.
9 more elements
A semiconductor device comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- an oxide semiconductor layer over the first insulating layer;
- a second conductive layer over and electrically connected to the oxide semiconductor layer;
- a third conductive layer over and electrically connected to the oxide semiconductor layer;
- a second insulating layer over the oxide semiconductor layer;
- and
- a fourth conductive layer over the second insulating layer,
- wherein the oxide semiconductor layer comprises:
- a first region that is in contact with the second conductive layer and overlaps with the first conductive layer and the fourth conductive layer;
- a second region that is not in contact with any of the second conductive layer and the third conductive layer and overlaps with the first conductive layer and the fourth conductive layer;
- a third region that is not in contact with any of the second conductive layer and the third conductive layer, overlaps with the first conductive layer, and does not overlap with the fourth conductive layer;
- and
- a fourth region that is in contact with the third conductive layer, overlaps with the first conductive layer, and does not overlap with the fourth conductive layer,
- wherein an end portion of the fourth conductive layer overlaps with the second conductive layer,
- wherein the second conductive layer and the third conductive layer are each in contact with a side surface of the oxide semiconductor layer.
13 more elements
Dependencies are inferred from the claim text.