US 9,865,742 B2 · Semiconductor device

Abstract

It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

Claims12

Dependent claims

A semiconductor device comprising:

a pixel portion;
and
a terminal portion comprising:
a first insulating layer, the first insulating layer comprising silicon and nitrogen;
a second insulating layer over the first insulating layer, the second insulating layer comprising silicon and oxygen;
a conductive layer over the second insulating layer;
and
a transparent conductive layer over the conductive layer;
wherein the conductive layer is electrically connected to the transparent conductive layer,
wherein the conductive layer comprises a same metal element as a metal element comprised in source and drain electrodes of a transistor,
wherein the terminal portion is located outside the pixel portion, and
wherein end portions of the first insulating layer and the second insulating layer are tapered and substantially aligned with each other.

9 more elements

A semiconductor device comprising:

a terminal portion, wherein the terminal portion comprises:
a first insulating layer, the first insulating layer comprising silicon and nitrogen;
a second insulating layer over the first insulating layer, the second insulating layer comprising silicon and oxygen;
a conductive layer over the second insulating layer;
a transparent conductive layer over the conductive layer, wherein the conductive layer is electrically connected to the transparent conductive layer;
and
a pixel portion comprising a transistor, wherein the transistor comprises:
a third insulating layer, the third insulating layer comprising silicon and nitrogen;
a fourth insulating layer over the third insulating layer, the fourth insulating layer comprising silicon and oxygen;
an oxide semiconductor layer including a channel region over the fourth insulating layer;
a source electrode electrically connected to the oxide semiconductor layer;
a drain electrode electrically connected to the oxide semiconductor layer;
and
a fifth insulating layer over the oxide semiconductor layer, the fifth insulating layer comprising silicon and oxygen,
wherein the conductive layer comprises a same metal element as a metal element comprised in the source and drain electrodes,
wherein the terminal portion is located outside the pixel portion, and
wherein end portions of the first insulating layer and the second insulating layer are tapered and substantially aligned with each other.

14 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims12