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US 9,865,737 B2Granted
Formation of FinFET junction
AssigneeInternational Business Machines Corporation
InventorsKevin K. Chan, Pouya Hashemi, Ali Khakifirooz, John A. Ott, Alexander Reznicek
Life of this patent
Estimating the term…
Abstract
A finFET structure, and method of forming such structure, in which a germanium enriched nanowire is located in the channel region of the FET, while simultaneously having silicon-germanium fin in the source/drain region of the finFET.
Claims16
A finFET structure comprising:
- a fin, wherein the fin comprises a source/drain region and a channel region, wherein a portion of the fin in the source/drain region is silicon germanium, and wherein a portion of the fin in the channel region contains a higher concentration of germanium than the source/drain region;
- an epitaxial layer located above the source/drain region;
- a spacer layer located above the source/drain region and adjacent to the epitaxial layer;
- and
- a dielectric layer surrounding the channel region of the fin, wherein a first portion of a vertical surface of the dielectric layer is in direct contact with the spacer layer and above the channel region of the fin, wherein a second portion of the vertical surface of the dielectric layer is in direct contact with the source/drain region of the fin, and wherein a horizontal surface of the dielectric layer is in direct contact with the entire channel region.
2 more elements
A finFET structure comprising:
- a fin, wherein the fin comprises a source/drain region and a channel region, wherein a portion of the fin in the source/drain region is silicon germanium, and wherein the cross-sectional area of the portion of the fin in the source/drain region is greater than the cross-sectional area of the portion of the fin in the channel region;
- an epitaxial layer located above the source/drain region;
- a spacer layer located above the source/drain region and adjacent to the epitaxial layer;
- and
- a dielectric layer surrounding the channel region of the fin, wherein a first portion of a vertical surface of the dielectric layer is in direct contact with the spacer layer and above the channel region of the fin, wherein a second portion of the vertical surface of the dielectric layer is in direct contact with the source/drain region of the fin, and wherein a horizontal surface of the dielectric layer is in direct contact with the entire channel region.
2 more elements
Dependencies are inferred from the claim text.