Semiconductor devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChong-Kwang Chang, Young-Mook Oh, Hak-Yoon Ahn, Jung-Gun You, Gi-Gwan Park, Baik-Min Sung
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Abstract
A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.
Claims18
A semiconductor device, comprising:
- a gate structure on a substrate;
- a source/drain layer on a portion of the substrate adjacent the gate structure;
- a first contact plug on an upper surface of the source/drain layer;
- and
- a second contact plug contacting an upper surface of the gate structure and contacting an upper surface of the first contact plug, a bottom surface of the second contact plug having first and second portions adjacent to each other, each of the first and second portions contacting neither the upper surface of the first contact plug nor the upper surface of the gate structure, and the second portion being convex and lower than the upper surface of the gate structure,
- wherein the gate structure is closer to the second portion of the bottom surface of the second contact plug than the first portion thereof.
A semiconductor device, comprising:
- a gate structure on a substrate;
- a source/drain layer on a portion of the substrate adjacent the gate structure;
- a first contact plug contacting an upper surface of the source/drain layer;
- and
- a second contact plug contacting an upper surface of the gate structure and an upper surface of the first contact plug, a bottom surface of the second contact plug having a first portion contacting neither the upper surface of the first contact plug nor the upper surface of the gate structure,
- wherein the gate structure is one of a plurality of gate structures spaced apart from each other in a first direction, each of the gate structures extending in a second direction substantially perpendicular to the first direction,
- and wherein the second contact plug includes:
- a first extension portion extending in the second direction between the gate structures and contacting at least a part of the upper surface of the first contact plug;
- and
- a second extension portion extending in the first direction, the second extension portion being connected to the first extension portion and contacting a part of the upper surface of at least one of the gate structures.
A semiconductor device, comprising:
- a gate structure on a substrate, the gate structure having a topmost surface at a first height and a bottom-most surface at a second height;
- a source/drain layer on a portion of the substrate adjacent the gate structure;
- a first contact plug on a top surface of the source/drain layer;
- and
- a second contact plug contacting the topmost surface of the gate structure and a top surface of the first contact plug, a bottom surface of the second contact plug having first and second portions contacting neither the topmost surface of the gate structure nor the top surface of the first contact plug,
- wherein the first portion of the bottom surface of the second contact plug is at a height equal to the first height or the second height or between the first height and the second height, and the second portion of the bottom surface of the second contact plug is at a height greater than the first height.
Dependencies are inferred from the claim text.