Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process

A semiconductor device comprising:

• a silicon substrate;
• a gate electrode over the silicon substrate;
• a gate insulating film between the gate electrode and the silicon substrate, the gate insulating film at least including hafnium;
• as viewed in cross section, an offset spacer between a sidewall film and the gate electrode;
• a source/drain region in the substrate, the source/drain region having a lattice constant different from a lattice constant of silicon substrate;
• a work function control film between the gate insulating film and the gate electrode;
• as viewed in the cross section, a first insulating film on both of oppositely facing sides of the gate electrode;
• and
• as viewed in the cross section, a second insulating film contacting at least a portion of a top surface of the gate electrode.