Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a first carbon doped epitaxial layer disposed on a substrate, wherein the first carbon doped epitaxial layer protrudes from the substrate;
• a p-type metal oxide semiconductor device (PMOS) disposed over the first carbon doped epitaxial layer, comprising:
• a first gate structure located on the first carbon doped epitaxial layer;
• a first channel region entirely disposed in the first carbon doped epitaxial layer;
• and
• activated first source/drain regions disposed on opposite sides of the first channel region, and the first carbon doped epitaxial layer surrounding the first source/drain regions for blocking dopants in the first source/drain regions from penetrating into the first channel region during a thermal process;
• a second carbon doped epitaxial layer disposed on the substrate, wherein the second carbon doped epitaxial layer protrudes from the substrate;
• an n-type metal oxide semiconductor device (NMOS) disposed over the second carbon doped epitaxial layer, comprising:
• a second gate structure located on the second carbon doped epitaxial layer;
• a second channel region entirely disposed in the second carbon doped epitaxial layer;
• and
• activated second source/drain regions disposed on opposite sides of the second channel region, and the second carbon doped epitaxial layer surrounding the second source/drain regions for blocking dopants in the second source/drain regions from penetrating into the second channel region during the thermal process;
• and
• an dielectric isolation, arranged to isolate the p-type metal oxide semiconductor device (PMOS) and the n-type metal oxide semiconductor device (NMOS),
• wherein the first carbon doped epitaxial layer and the second carbon doped epitaxial layer are entirely doped with carbon, and the first carbon doped epitaxial layer and the second carbon doped epitaxial layer are disposed above and not overlapped in a vertical direction with the dielectric isolation.