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US 9,865,729 B1Granted
Laterally diffused metal oxide semiconductor with segmented gate oxide
AssigneeTexas Instruments Incorporated
InventorsSameer Pendharkar, Ming-yeh Chuang
Life of this patent
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Abstract
A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.
Claims10
An integrated circuit comprising:
- a semiconductor material substrate;
- a power transistor having at least one transistor finger that lies within the semiconductor material substrate, each transistor finger including:
- a source region stripe;
- a drain region stripe substantially parallel to the source region stripe;
- a channel region stripe located between the source region stripe and the drain region stripe;
- a comb shaped gate oxide region stripe that overlies the channel region stripe, in which the comb shaped gate oxide region stripe has gate oxide fingers oriented perpendicular to the source region stripe and the drain region stripe;
- a comb shaped dielectric region with dielectric fingers that lie between each of the fingers of the comb shaped gate oxide;
- and
- a conductive gate layer that overlies the comb shaped gate oxide and the comb shaped dielectric.
6 more elements
A method for fabricating a power transistor in an integrated circuit, the method comprising:
- diffusing a first well having a first conductivity type and a second well having a second conductivity type into an epitaxial layer of a semiconductor substrate;
- diffusing a source region stripe into the first well and a substantially parallel drain region stripe into the second well such that a channel region stripe is located substantially parallel to and between the source region stripe and the drain region stripe;
- growing a comb shaped field oxide region stripe that overlies the channel region stripe, in which the comb shaped field oxide region stripe has fingers oriented perpendicular to the source region stripe and the drain region stripe;
- growing a layer of gate oxide over the semiconductor substrate and field oxide region to form a comb shaped gate oxide region with fingers that lie between each of the fingers of the comb shaped field oxide;
- and
- growing and patterning a conductive gate layer that overlies the comb shaped gate oxide and the comb shaped field oxide.
3 more elements
Dependencies are inferred from the claim text.