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US 9,865,720 B2Granted
High electron-mobility transistor
AssigneeSumitomo Electric Industries, Ltd.
InventorKen Nakata
Life of this patent
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Abstract
A nitride semiconductor device is disclosed. The semiconductor device provides the GaN channel layer, the InAlN barrier layer on the GaN channel layer, and the n-type AlGaN layer on the InAlN barrier layer. The source and drain electrodes are formed on the n-type AlGaN layer, while, the gate electrode is formed directly on the InAlN barrier layer. The n-type AlGaN layer has the aluminum (Al) composition greater than 20% at the interface against the InAlN barrier layer, which is greater than the aluminum (Al) composition at the interface against the source electrode.
Claims13
A nitride semiconductor device, comprising:
- a channel layer made of gallium nitride (GaN);
- a barrier layer made of indium aluminum nitride (InAlN) that is formed on the channel layer;
- an n-type layer made of aluminum gallium nitride (AlGaN) that is formed on the barrier layer, the n-type layer being doped with n-type impurities, the n-type layer having an aluminum composition greater than 20% at an interface against the barrier layer, the aluminum composition of the n-type layer at the interface being greater than the aluminum composition at a surface opposite to the interface;
- and
- a source electrode, a drain electrode, and a gate electrode, the source electrode and the drain electrode being provided on the n-type layer, and the gate electrode being in direct contact with the barrier layer.
2 more elements
Dependencies are inferred from the claim text.