Selectively deposited spacer film for metal gate sidewall protection
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsai-Jung Ho, Pei-Ren Jeng
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Abstract
A method of fabricating a fin field-effect transistor (FinFET) device is provided. The method includes forming a carbon-based layer on a plurality of gate structures formed on a semiconductor substrate. Each gate structure overlies at least one fin formed on the semiconductor substrate. The carbon-based layer covers sidewalls of the gate structures. A metal silicide layer overlies the carbon-based layer. The metal silicide layer and carbon-based layer are removed, and a metal layer is formed between adjacent gate structures.
Claims20
A method of fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- forming a carbon-based layer on a gate structure overlying a fin formed on a semiconductor substrate;
- forming a metal silicide layer overlying the carbon-based layer;
- and
- removing the metal silicide layer and carbon-based layer.
A method of fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- forming a gate structure overlying a fin on a semiconductor substrate;
- forming a carbon-based layer on sidewalls of the gate structure by supplying a gas mixture of hydrogen, ammonia, acetylene, and helium to the gate structure;
- and
- forming a metal silicide layer overlying the carbon-based layer.
A method of fabricating a fin field-effect transistor (FinFET) device, the method comprising:
- forming a plurality of fins on a semiconductor substrate;
- forming a plurality of gate structures, each gate structure overlying at least one fin;
- forming source and drain regions on the fins adjacent the gate structures;
- forming an interlayer dielectric on the plurality of fins and gate structures;
- forming openings in the interlayer dielectric exposing the source and drain regions;
- and
- forming a carbon-based layer on sidewalls of the openings by supplying a gas mixture of hydrogen, ammonia, acetylene, and helium to the openings.
Dependencies are inferred from the claim text.