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US 9,865,707 B2Granted
Fabricating method of a strained FET
AssigneeUnited Microelectronics Corp.
InventorPo-Yu Yang
Life of this patent
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Abstract
A fabricating method of a strained FET includes providing a semiconductive layer having a gate structure disposed thereon, wherein an epitaxial layer is embedded in the semiconductive layer aside the gate structure. Later, an element supply layer is formed to contact the epitaxial layer, wherein the element supply layer and the epitaxial layer have at least one identical element besides silicon. Finally, a thermal process is performed to drive the element into the epitaxial layer.
Claims10
A fabricating method of a strained FET, comprising
- providing a semiconductive layer having a gate structure disposed thereon, wherein an epitaxial layer is embedded in the semiconductive layer beside the gate structure, wherein the semiconductive layer is made of at least one semiconductor material;
- forming an element supply layer contacting the epitaxial layer, wherein the element supply layer and the epitaxial layer have at least one identical element besides silicon, wherein the strained FET is a NMOS, the element is C or P, the epitaxial layer comprises SiC or SiP, and the element supply layer comprises C, SiC, SiCP or SiP;
- and
- performing a thermal process to drive the element within the element supply layer into the epitaxial layer, wherein the step of forming the element supply layer and the epitaxial layer having at least one identical element besides silicon is before the thermal process.
1 more element
A fabricating method of a strained FET, comprising
- providing a semiconductive layer having a gate structure disposed thereon, wherein an epitaxial layer is embedded in the semiconductive layer beside the gate structure, wherein the semiconductive layer is made of at least one semiconductor material;
- forming an element supply layer contacting the epitaxial layer, wherein the element supply layer and the epitaxial layer have at least one identical element besides silicon;
- forming a cover layer covering the element supply layer, wherein the cover layer comprises SiN, SiO2, SiCN or TiN;
- after forming the cover layer, performing a thermal process to drive the element within the element supply layer into the epitaxial layer, wherein the step of forming the element supply layer and the epitaxial layer having at least one identical element besides silicon is before the thermal process.
1 more element
Dependencies are inferred from the claim text.