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US 9,865,706 B2Granted
Integrated process and structure to form III-V channel for sub-7nm CMOS devices
AssigneeApplied Materials, Inc.
InventorsXinyu Bao, Chun Yan
Life of this patent
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Abstract
Embodiments described herein generally relate to methods and structures for forming precise fins comprising Group III-V elements on a silicon substrate. A buffer layer is deposited in a trench formed in the dielectric material on a substrate. An isolation layer is then deposited over the buffer layer. A portion of the isolation layer is removed allowing for a precisely sized Group III-V channel layer to be deposited on the isolation layer.
Claims20
A method, comprising:
- depositing a buffer layer in a first trench and in a second trench formed in a dielectric material on a substrate;
- depositing an isolation layer over the buffer layer in the first trench and in the second trench;
- overfilling the first trench and the second trench with the isolation layer;
- removing a portion of the isolation layer in the first trench and in the second trench to form a first recess in the first trench and a second recess in the second trench such that the isolation layer in the first trench has a first thickness and the isolation layer in the second trench has a second thickness, the first thickness being different than the second thickness;
- depositing a channel material over the isolation layer in the first recess and in the second recess;
- overfilling the first recess and the second recess with the channel material to form a channel layer and an overfill;
- planarizing the substrate to remove the overfill such that a thickness of the channel layer in the first recess is equal to a thickness of the channel layer in the second recess;
- and
- etching the dielectric material to expose the channel layer and at least a portion of the isolation layer.
6 more elements
A method, comprising:
- depositing a dielectric material on a substrate;
- forming a first trench and a second trench in the dielectric material;
- depositing a buffer layer in the first trench and in the second trench;
- depositing an isolation material over the buffer layer in the first trench and in the second trench to form an isolation layer and a first overfill;
- planarizing the substrate to remove the first overfill;
- etching a portion of the isolation layer in the first trench and in the second trench to form a first recess in the first trench and a second recess in the second trench such that the isolation layer in the first trench has a first thickness and the isolation layer in the second trench has a second thickness, the first thickness being different than the second thickness;
- depositing a channel material over the isolation layer in the first recess and in the second recess to form a channel layer and a second overfill;
- planarizing the substrate to remove the second overfill such that a thickness of the channel layer in the first recess is equal to a thickness of the channel layer in the second recess;
- and
- etching the dielectric material to expose the channel layer and at least a portion of the isolation layer.
7 more elements
A method, comprising:
- disposing a substrate having a dielectric material with at least a first trench and a second trench formed thereon in a first chamber;
- in the first chamber, forming a buffer layer in the first trench and in the second trench;
- in the first chamber, forming an isolation material over the buffer layer in the first trench and in the second trench to form an isolation layer and a first overfill;
- transferring the substrate to a second chamber;
- in the second chamber, planarizing the substrate to remove the first overfill;
- transferring the substrate to a third chamber;
- in the third chamber, removing a portion of the isolation layer in the first trench and in the second trench to form a first recess in the first trench and a second recess in the second trench such that the isolation layer in the first trench has a first thickness and the isolation layer in the second trench has a second thickness, the first thickness being different than the second thickness;
- transferring the substrate to the first chamber;
- in the first chamber, adding a channel material over the isolation layer in the first recess and in the second recess to form a channel layer and a second overfill;
- transferring the substrate to the second chamber;
- in the second chamber, planarizing the substrate to remove the second overfill such that a thickness of the channel layer in the first recess is equal to a thickness of the channel layer in the second recess;
- transferring the substrate to the third chamber;
- and
- in the third chamber, removing the dielectric material to expose the channel layer and at least a portion of the isolation layer.
11 more elements
Dependencies are inferred from the claim text.