High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process

A semiconductor structure comprising:

• a semiconductor substrate having an outer surface;
• a plurality of metal gate stacks located outward of said outer surface of said semi conductor substrate;
• a plurality of oxide regions, located outward of said outer surface of said semiconductor substrate, and interspersed between said plurality of metal gate stacks;
• a liner interspersed between said plurality of oxide regions and said semiconductor substrate and between said plurality of oxide regions and said plurality of metal gate stacks;
• and
• a plurality of high-K layers separating said plurality of metal gate stacks from said semiconductor substrate and disposed between said plurality of metal gate stacks and said plurality of oxide regions;
• wherein:
• said plurality of oxide regions and said plurality of metal gate stacks extend outwardly to a first height from said semiconductor substrate;
• and
• said plurality of high-K layers extend outwardly to a second height from said semiconductor substrate, said second height being less than said first height;
• further comprising a plurality of FINS protruding from said substrate between said plurality of oxide regions and intermediate said plurality of high-K layers and said substrate, wherein said second height is such that said plurality of high-K layers extend outwardly beyond said plurality of FINS.