Schottky barrier diode and method for manufacturing the same
AssigneeHyundai Motor Company
InventorsYoungkyun Jung, Junghee Park, Dae Hwan Chun, JongSeok Lee
Life of this patent
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Abstract
A Schottky barrier diode includes: an n+ type of silicon carbide substrate; an n− type of epitaxial layer formed on a first surface of the n+ type of silicon carbide substrate; a plurality of p+ regions formed inside the n− type of epitaxial layer; a Schottky electrode formed in an upper portion of the n− type of epitaxial layer of an electrode region; and an ohmic electrode formed on a second surface of the n+ type of silicon carbide substrate, wherein the plurality of p+ regions are formed to be spaced apart from each other at a predetermined interval within the n− type of epitaxial layer.
Claims8
A method for manufacturing a Schottky barrier diode, comprising:
- forming an n− type of epitaxial layer on a first surface of an n+ type of silicon carbide substrate;
- patterning a plurality of trenches to be spaced apart from each other at a predetermined interval in an upper surface of the n− type of epitaxial layer;
- forming a first blocking part within the plurality of trenches;
- forming a plurality of second blocking parts to be spaced apart from each other at a predetermined interval in an upper portion of the n− type of epitaxial layer;
- forming a p+ region by injecting p+ ions into the n− type of epitaxial layer using the first blocking part and the plurality of second blocking parts as a mask;
- removing the first blocking part and the plurality of second blocking parts;
- growing the n− type of epitaxial layer to enclose the p+ region;
- forming a Schottky electrode in an upper portion of the grown n− type of epitaxial layer;
- and
- forming an ohmic electrode on a second surface of the n+ type of silicon carbide substrate.
Dependencies are inferred from the claim text.