Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorsDaiyu Kondo, Shintaro Sato
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.
Claims4
A semiconductor device, comprising:
- a source electrode and a drain electrode;
- a channel including a graphene layer suspended by the source electrode and the drain electrode;
- a gate electrode which changes a band structure of the graphene layer;
- and
- a gate insulation film formed between the gate electrode and the channel, wherein
- the graphene layer extends in a direction apart from the channel over the source electrode and the drain electrode, and the channel is thinner than a portion of the graphene layer extending in the direction apart from the channel over the source electrode and the drain electrode.
Dependencies are inferred from the claim text.