Sputtering target, method for manufacturing the same, and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A deposition technique for forming an oxynitride film is provided. A highly reliable semiconductor element is manufactured with the use of the oxynitride film. The oxynitride film is formed with the use of a sputtering target including an oxynitride containing indium, gallium, and zinc, which is obtained by sintering a mixture of at least one of indium nitride, gallium nitride, and zinc nitride as a raw material and at least one of indium oxide, gallium oxide, and zinc oxide in a nitrogen atmosphere. In this manner, the oxynitride film can contain nitrogen at a necessary concentration. The oxynitride film can be used for a gate, a source electrode, a drain electrode, or the like of a transistor.
Claims12
A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode comprising an oxynitride film over a substrate with the use of a sputtering target;
- and
- forming an oxide semiconductor film over the gate electrode,
- wherein the semiconductor device comprises a transistor,
- wherein the oxide semiconductor film comprises a channel formation region of the transistor,
- wherein the oxide semiconductor film is formed in an argon atmosphere, an oxygen atmosphere, or a mixed atmosphere containing argon and oxygen,
- wherein the sputtering target includes a sintered body of an oxynitride comprising at least two elements selected from indium, gallium, zinc, and tin, and
- wherein a concentration of nitrogen in the sintered body of the oxynitride is 4 atomic % or more.
A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor film over a substrate;
- and
- forming a gate electrode comprising an oxynitride film over the oxide semiconductor film with the use of a sputtering target,
- wherein the semiconductor device comprises a transistor,
- wherein the oxide semiconductor film comprises a channel formation region of the transistor,
- wherein the oxide semiconductor film is formed in an argon atmosphere, an oxygen atmosphere, or a mixed atmosphere containing argon and oxygen,
- wherein the sputtering target includes a sintered body of an oxynitride comprising at least two elements selected from indium, gallium, zinc, and tin, and
- wherein a concentration of nitrogen in the sintered body of the oxynitride is 4 atomic % or more.
Dependencies are inferred from the claim text.