Spatial terahertz wave phase modulator based on high electron mobility transistor

A spatial terahertz wave phase modulator based on a high electron mobility transistor, comprising:

• a semiconductor substrate;
• an epitaxial layer on the semiconductor substrate;
• and a modulation unit array, a positive electrode, as well as a negative electrode on the epitaxial layer;
• wherein each modulation unit in the modulation unit array comprises:
• a source resonator, a drain resonator, a gate connector, and a semiconductor doped heterostructure;
• wherein the drain resonator and the source resonator are structurally identical;
• comprising:
• a metal semi-circle and a T-shaped metal feeder;
• wherein the T-shaped metal feeder comprises a latitudinal branch and a longitudinal branch;
• the longitudinal branch of the T-shaped metal feeder passes through the metal semi-circle from a top portion thereof;
• semi-circle openings of the drain resonator and the source resonator face each other and are symmetrically arranged at two sides of the gate connector;
• the semiconductor doped heterostructure is placed at bottom portions of semi-circle rear ends of the drain resonator and the source resonator, so as to connect the drain resonator and the source resonator;
• the semiconductor doped heterostructure is also placed at a bottom portion of the gate connector;
• a row of array elements of the modulation unit array shares the gate connector, and the gate connector of each row is connected to the same negative electrode;
• the latitudinal branch of the T-shaped metal feeder of the drain resonator of each the modulation unit in a row is connected to the positive electrode in sequence;
• the latitudinal branch of the T-shaped metal feeder of the source resonator of each the modulation unit in the row is connected to the positive electrode in sequence.