Monolithic integrated semiconductor structure
AssigneeNasp III/V GmbH
InventorBernardette Kunert
Life of this patent
Estimating the term…
Abstract
A monolithic integrated semiconductor structure includes: A) an Si carrier layer, B) a layer having the composition BxAlyGazNtPv, wherein x=0-0.1, y=0-1, z=0-1, t=0-0.1 and v=0.9-1, C) a relaxation layer having the composition BxAlyGazInuPvSbw, wherein x=0-0.1, y=0-1, z=0-1, u=0-1, v=0-1 and w=0-1, wherein w and/or u is on the side facing toward layer A) or B) smaller than, equal to, or bigger than on the side facing away from layer A) or B) and wherein v=1−w and/or y=1−u−x−z, and D) a group III/V, semiconductor material. The sum of the above stoichiometric indices for all group III elements and for all group V elements are each equal to one.
Claims17
A monolithic integrated semiconductor structure comprising:
- A) a carrier layer including doped or undoped Si,
- B) a layer having the composition BxAlyGazNtPv, wherein x=0-0.1, y=0-1, z=0-1, t=0-0.1 and v=0.9-1,
- C) a relaxation layer having the composition BxAlyGazInuPvSbw, wherein x=0-0.1, y=0-1, z=0-1, u=0-1, v=0-1 and w=0-1, wherein w and/or u is on the side facing toward layer A) or B) smaller than, equal to, or bigger than on the side facing away from layer A) or B) and varies or is constant within the relaxation layer, and wherein v=1−w and/or y=1−u−x−z,
- and
- D) an additional semiconductor material, or a combination of different semiconductor materials,
- wherein the sum of stoichiometric indices for all group III elements is equal to 1 and wherein the sum of stoichiometric indices for all group V elements is equal to 1, wherein the compositions of layers C), E), and F) are selected such that the lattice constant of one of layers E) and/or F) and/or of the side of layer C) facing away from layer A) or B) substantially corresponds to the lattice constant of layer F).
Dependencies are inferred from the claim text.