Three-dimensional semiconductor memory devices including a vertical channel
AssigneeSamsung Electronics Co., Ltd.
InventorsJaesung Sim, Youngwoo Park
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Abstract
Semiconductor memory devices and methods of forming the semiconductor devices may be provided. The semiconductor memory devices may include a channel portion of an active pillar that may be formed of a semiconductor material having a charge mobility greater than a charge mobility of silicon. The semiconductor devices may also include a non-channel portion of the active pillar including a semiconductor material having a high silicon content.
Claims19
A semiconductor memory device comprising:
- a plurality of gate electrodes stacked on a substrate;
- an active pillar extending through the plurality of gate electrodes;
- and
- a gate insulating layer disposed between the active pillar and the plurality of gate electrodes,
- wherein the active pillar includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a sidewall of the gate insulating layer,
- wherein the first semiconductor layer comprises a single crystalline material or silicon-germanium (SiGe), and
- wherein a germanium content of the first semiconductor layer is higher than a silicon content of the first semiconductor layer.
The semiconductor memory device of claim i, wherein the second semiconductor layer has an amorphous structure, a single crystalline structure, or a poly-crystalline structure.
A semiconductor memory device comprising:
- a plurality of gate electrodes stacked on a substrate;
- an active pillar extending through the plurality of gate electrodes;
- and
- a gate insulating layer disposed between the active pillar and the plurality of gate electrodes,
- wherein the active pillar includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a sidewall of the gate insulating layer,
- wherein the first semiconductor layer comprises a single crystalline material ,or silicon-germanium (SiGe),
- wherein the active pillar further comprises a third semiconductor layer on a sidewall of the second semiconductor layer,
- wherein the second semiconductor layer includes silicon-germanium (SiGe), and
- wherein the third semiconductor layer is a silicon layer.
A semiconductor memory device comprising:
- a plurality of gate electrodes stacked on a substrate;
- an active pillar extending through the plurality of gate electrodes;
- and
- a gate insulating layer extending between the active pillar and the plurality of gate electrodes,
- wherein the active pillar includes a first semiconductor layer and a second semiconductor layer sequentially stacked on the gate insulating layer,
- wherein the second semiconductor layer comprises a material different from the, first semiconductor layer,
- wherein the first semiconductor layer comprises a single crystalline material or silicon-germanium (SiGe), and
- wherein a germanium content of the first semiconductor layer is higher than a germanium content of the second semiconductor layer.
Dependencies are inferred from the claim text.