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US 9,865,683 B2Granted
Electronic device having a transistor with increased contact area and method for fabricating the same
AssigneeSK hynix Inc.
InventorHyung-Suk Lee
Life of this patent
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Abstract
An electronic device includes a semiconductor memory unit that includes: a gate including at least a portion buried in a substrate; a junction portion formed in the substrate on both sides of the gate; and a memory element coupled with the junction portion on one side of the gate, wherein the junction portion includes: a recess having a bottom surface protruded in a pyramid shape; an impurity region formed in the substrate and under the recess; and a contact pad formed in the recess.
Claims20
An electronic device comprising a semiconductor memory unit that comprises:
- a substrate having an upper surface protruded in a pyramid shape and a bottom surface;
- a gate including at least a portion buried in the substrate;
- a junction portion formed on both sides of the gate;
- and
- a memory element coupled with the junction portion on one side of the gate,
- wherein the junction portion comprises:
- an impurity region formed to include a pyramid shaped bottom surface along the upper surface of the substrate;
- and
- a contact pad formed over the impurity region,
- wherein the gate includes:
- a trench that is formed in the substrate;
- and
- a gate electrode that fills a portion of the trench, and
- wherein the impurity region has an edge portion overlapping with the gate electrode in a direction orthogonal to the bottom surface of the substrate and a center portion with the lowest part not overlapping with the gate electrode in the direction.
11 more elements
A transistor, comprising:
- a substrate including a plurality of active regions, each active region including an upper surface that protrudes in a pyramid shape and a bottom surface;
- gates each including at least a portion buried in the substrate and formed between the active regions;
- impurity regions each formed over the protruded upper portions of the active regions;
- and
- contact pads formed over the impurity regions,
- wherein each of the gates includes:
- a trench formed in the substrate and between the active regions;
- a gate electrode for gap-filling a portion of each trench;
- and
- wherein the impurity region has an edge portion overlapping with the gate electrode in a direction orthogonal to the bottom surface of the substrate and a middle portion not overlapping with the gate electrode in the direction.
7 more elements
Dependencies are inferred from the claim text.