Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsHideki Mizuhara, Yoshihiro Matsushima, Shinichi Oohashi
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Abstract
In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.
Claims12
A compound semiconductor device comprising:
- a chip substrate being a base of a compound semiconductor chip;
- an aluminum nitride layer disposed above the chip substrate;
- a compound semiconductor layer disposed above the aluminum nitride layer;
- and
- an element placed on an upper surface of the compound semiconductor layer,
- wherein at least one of side surfaces of the aluminum nitride layer is entirely covered by an amorphous layer or a polycrystal layer,
- the at least one of side surfaces is arranged along an outer periphery of the chip substrate,
- the amorphous layer or the polycrystal layer includes aluminum,
- the chip substrate has a first recess along the outer periphery of the chip substrate, and
- the amorphous layer or the polycrystal layer is in contact with the first recess.
A method for producing a compound semiconductor device, wherein the compound semiconductor device includes a chip substrate being a base of a compound semiconductor chip, an aluminum nitride layer disposed above the chip substrate, a compound semiconductor layer disposed above the aluminum nitride layer and an element placed on an upper surface of the compound semiconductor layer, the method comprising:
- irradiating a laser beam along a scribe lane of the compound semiconductor device to entirely cover at least one of side surfaces of the aluminum nitride layer by an amorphous layer or a polycrystal layer,
- wherein the at least one of side surfaces is arranged along an outer periphery of the chip substrate, and
- the amorphous layer or the polycrystal layer includes aluminum.
Dependencies are inferred from the claim text.