High voltage field balance metal oxide field effect transistor (FBM)

A semiconductor device, comprising:

• a semiconductor substrate of a first conductivity type;
• an epitaxial layer of the first conductivity type disposed on a top surface of the semiconductor substrate;
• a body region of a second conductivity type that is opposite of the first conductivity type disposed near a top surface of the epitaxial layer;
• a source region of the first conductivity type disposed near the top surface of the epitaxial layer inside the body region;
• a drain disposed at a bottom surface of the semiconductor substrate:
• a gate overlapping a portion of the source region and a portion of the body region having a gate insulation layer separating the gate from the source region and the body region;
• first and second trenches formed in the epitaxial layer on opposite sides of the gate, wherein the first and second trenches are lined with a trench insulation material and filled with an electrically conductive trench filling material;
• a first buried doped region of the second conductivity type positioned below the first trench;
• one or more charge linking paths of the second conductivity type positioned along one or more trench walls of the first trench and configured to electrically connect the first buried doped region to the body region;
• and
• a second buried doped region of the second conductivity type positioned below the second trench, wherein portions of the expitaxial layer separate the second buried doped region from the body region.