Power semiconductor device
AssigneeMacroblock, Inc.
InventorsChih-Fang Huang, Kung-Yen Lee, Chia-Hui Cheng, Sheng-Zhong Wang
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Abstract
A power semiconductor device includes a substrate, a main body, and an electrode unit. The main body includes an active portion disposed on the substrate, an edge termination portion, and an insulating layer disposed on the edge termination portion. The edge termination portion includes first-type semiconductor region, a second-type semiconductor region and a top surface. The first-type semiconductor region is adjacent to the active portion and has a first-type doping concentration decreased from the top surface toward the substrate. The electrode unit includes a first electrode disposed on the insulating layer, and a second electrode disposed on the substrate.
Claims18
A power semiconductor device, comprising:
- a substrate;
- a main body including an active portion that is disposed on said substrate, an edge termination portion that is disposed on said substrate and that surrounds said active portion, and an insulating layer that is disposed on said edge termination portion and spaced apart from said substrate, said edge termination portion including a first-type semiconductor region, a second-type semiconductor region, and a top surface that is formed on top of said first-type and second-type semiconductor regions and that underlies said insulating layer, said first-type semiconductor region being disposed adjacent to said active portion, and having a first-type doping concentration that is decreased from said top surface toward said substrate, said first-type semiconductor region and said second-type semiconductor region cooperatively forming a junction;
- an electrode unit including a first electrode that is disposed on said insulating layer and that is electrically coupled to said active region, and a second electrode that is disposed on said substrate and that is spaced apart from said main body, and
- wherein said substrate has a top surface, said first-type semiconductor region of said edge termination portion extending from said top surface of said edge termination portion toward said substrate and surrounding said active region, said second-type semiconductor region of said edge termination portion extending from said top surface of said substrate to said top surface of said edge termination portion and surrounding said first-type semiconductor region.
Dependencies are inferred from the claim text.