High resistivity soft magnetic material for miniaturized power converter
AssigneeInternational Business Machines Corporation
InventorsHariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Abstract
An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
Claims6
An on-chip magnetic structure, comprising:
- an activated metallic seed layer comprising NiFe arranged directly on a silicon substrate, the activated metallic seed layer having a dissolved portion comprising palladium nanoparticles that has a thickness of about 10 to about 20 nanometers (nm), and the activated seed layer having an overall thickness of about 10 to about 200 nm;
- a magnetic material disposed onto the layer of nanoparticles, the magnetic material consisting essentially of palladium, cobalt, tungsten, and phosphorus, with cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material;
- wherein the magnetic material has a thickness in a range from about 1 to about 2 microns.
Dependencies are inferred from the claim text.