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US 9,865,657 B2Granted
Solid-state imaging device and electronic apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorAkihiro Nakamura
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes: a plurality of laminated photoelectric conversion sections; a reading section configured of a semiconductor region formed inside a semiconductor substrate and reading electric charge that has been subjected to photoelectric conversion in the photoelectric conversion sections; a charge accumulation section accumulating the electric charge read by the reading section; and a light shielding structure shielding, from light, a portion other than the reading section and the photoelectric conversion sections.
Claims12
A solid-state imaging device, comprising:
- a semiconductor substrate including:
- a plurality of photoelectric conversion sections in the semiconductor substrate, wherein each of the plurality of photoelectric conversion sections comprises a first semiconductor region;
- a reading section that comprises a second semiconductor region provided inside the semiconductor substrate, wherein the reading section is configured to read a first electric charge that has been subjected to photoelectric conversion in the plurality of photoelectric conversion sections,
- wherein the second semiconductor region of the reading section is on the first semiconductor region of a first photoelectric conversion section of the plurality of photoelectric conversion sections,
- wherein a first impurity concentration of the first semiconductor region of the first photoelectric conversion section of the plurality of photoelectric conversion sections is different from a second impurity concentration of the second semiconductor region of the reading section;
- a charge accumulation section configured to accumulate the first electric charge read by the reading section;
- and
- a light shielding structure on a first portion of the semiconductor substrate, other than the reading section and the plurality of photoelectric conversion sections, wherein the light shielding structure is configured to shield the first portion of the semiconductor substrate from light.
5 more elements
An electronic apparatus, comprising:
- an optical system;
- a solid-state imaging device including:
- a semiconductor substrate including:
- a plurality of photoelectric conversion sections in the semiconductor substrate, wherein each of the plurality of photoelectric conversion sections comprises a first semiconductor region,
- a reading section that comprises a second semiconductor region inside the semiconductor substrate, wherein the reading section is configured to read electric charge that has been subjected to photoelectric conversion in the plurality of photoelectric conversion sections,
- wherein the second semiconductor region of the reading section is on the first semiconductor region of a photoelectric conversion section of the plurality of photoelectric conversion sections,
- wherein a first impurity concentration of the first semiconductor region of the photoelectric conversion section of the plurality of photoelectric conversion sections is different from a second impurity concentration of the second semiconductor region of the reading section,
- a charge accumulation section configured to accumulate the electric charge read by the reading section, and
- a light shielding structure on a portion of the semiconductor substrate, other than the reading section and the plurality of photoelectric conversion sections, wherein the light shielding structure is configured to shield the portion of the semiconductor substrate from light;
- and
- a signal processing circuit configured to process an output signal from the solid-state imaging device.
8 more elements
Dependencies are inferred from the claim text.