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US 9,865,654 B1Granted
Semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorsWanxun He, Su Xing
Life of this patent
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Abstract
A semiconductor structure includes a front side and a back side opposite to the front side, at least a transistor device formed on the front side of the substrate, and an adjustable resistor formed on the back side of the substrate. The adjustable resistor includes at least a phase change material PCM layer.
Claims11
A semiconductor structure comprising:
- a substrate comprising a front side and a back side opposite to the front side;
- at least a transistor device formed on the front side of the substrate;
- an adjustable resistor formed on the back side of the substrate, the adjustable resistor comprising at least a phase change material (PCM) layer, wherein the adjustable resistor further comprises a first electrode and a second electrode, and the PCM layer is sandwiched in between the first electrode and the second electrode;
- a connection structure formed on the back side of the substrate, and the connection structure comprising a first portion and a second portion;
- at least an interconnection structure formed on the front side of the substrate;
- and
- at least a through-silicon-via (TSV) structure electrically connecting the interconnection structure formed on the front side of the substrate and the connection structure formed on the back side of the substrate, wherein the interconnection structure is formed above the transistor device, and the transistor device and the first electrode of the adjustable resistor are electrically connected by the first portion of the connection structure, the TSV structure, and the interconnection structure.
4 more elements
Dependencies are inferred from the claim text.