High density resistive random access memory (RRAM)

A method, comprising:

• electrically coupling a first conduction terminal of a transistor to a first electrode of a resistive random access memory (RRAM) device, a second conduction terminal of the transistor to a source line, and a control terminal of the transistor to a word line;
• electrically coupling a bit line to a second electrode of the RRAM device;
• asserting the word line and the source line such that the transistor turns on;
• setting the bit line to a read voltage threshold such that current flowing through the transistor and into the first electrode and through a first silicided semiconductor fin of the RRAM device causes formation of conductive path in a hafnium oxide layer stacked on the first silicided semiconductor fin of the RRAM device;
• discharging the source line;
• and
• resetting the bit line so as to dissolve the conductive path.

A method of making a memory cell, comprising:

• forming a plurality of semiconductor fins on a substrate layer;
• depositing a siliciding layer on at least the plurality of semiconductor fins;
• annealing the siliciding layer so as to cause silication of at least a portion of each of the plurality of semiconductor fins to thereby form a plurality of silicided semiconductor fins;
• forming, on the plurality of silicided semiconductor fins, in a stacked arrangement, a first metal liner layer, a layer of hafnium oxide, and a second metal liner layer;
• filling areas between adjacent ones of the plurality of silicided semiconductor fins with a metal fill;
• forming a plurality of first contact pillars adjacent a different respective one of the plurality of silicided semiconductor fins;
• forming a second plurality of contact pillars each on the metal fill adjacent a space between a different pair of adjacent silicided semiconductor fins of the plurality thereof.