Threshold switching device and electronic device including the same
AssigneeSK hynix Inc.
InventorsKyung-Wan Kim, Jong-Chul Lee, Jong-Gi Kim
Life of this patent
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Abstract
A threshold switching device may include: a first electrode layer; a second electrode layer; an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects; and an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.
Claims22
A threshold switching device comprising:
- a first electrode layer;
- a second electrode layer;
- an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects;
- and
- an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects,
- wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects, and
- wherein the additional insulating layer includes an insulating material having a larger resistance than the insulating layer, and having a lower diffusive with respect to impurities than the insulating layer.
An electronic device comprising a semiconductor memory,
- wherein the semiconductor memory comprises:
- a memory element suitable for storing data;
- and
- a selecting element coupled to the memory element and suitable for controlling access to the memory element,
- wherein the selecting element comprises:
- a first electrode layer;
- a second electrode layer;
- an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects;
- and
- an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and
- wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.
The electronic device according of 11, further comprising a data storage system which includes:
- a storage device configured to store data and conserve stored data regardless of power supply;
- a controller configured to control input and output of data to and from the storage device according to a command inputted form an outside;
- a temporary storage device configured to temporarily store data exchanged between the storage device and the outside;
- and
- an interface configured to perform communication between at least one of the storage device, the controller and the temporary storage device and the outside,
- wherein the semiconductor memory is part of the storage device or the temporary storage device in the data storage system.
An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
- a first electrode;
- a first insulating layer over the first electrode;
- a second insulating layer over the first insulating layer;
- a second electrode over the second insulating layer;
- and
- a memory element over the second electrode,
- wherein the first insulating layer and the second insulating layer comprise a plurality of neutral defects, and
- wherein the neutral defects comprise immobile defects and mobile electrons.
Dependencies are inferred from the claim text.