Threshold switching device, method for fabricating the same and electronic device including the same

An electronic device comprising a semiconductor memory,

• wherein the semiconductor memory comprises:
• a memory element suitable for storing data;
• and
• a selecting element coupled to the memory element and suitable for controlling access to the memory element,
• wherein the selecting element comprises:
• a first electrode layer;
• a second electrode layer;
• a first insulating layer interposed between the first and second electrode layers, and provided adjacent to the first electrode layer;
• and
• a second insulating layer interposed between the first and second electrode layers, and provided adjacent to the second electrode layer,
• wherein the first and second insulating layers contain a plurality of neutral defects, a concentration of the plurality of neutral defects being at a maximum along an interface between the first insulating layer and the second insulating layer, and
• wherein the selecting element has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

The electronic device according of 13, further comprising a data storage system which includes:

• a storage device configured to store data and conserve stored data regardless of power supply;
• a controller configured to control input and output of data to and from the storage device according to a command inputted form an outside;
• a temporary storage device configured to temporarily store data exchanged between the storage device and the outside;
• and
• an interface configured to perform communication between at least one of the storage device, the controller and the temporary storage device and the outside,
• wherein the semiconductor memory is part of the storage device or the temporary storage device in the data storage system.