Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS
AssigneeTower Semiconductor Ltd.
InventorsAmos Fenigstein, Assaf Lahav
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Abstract
A backside illuminated semiconductor image sensor that includes a Fabry-Perot resonator tuned to absorb near infrared (NIR) radiation; wherein the Fabry-Perot resonator comprises a front reflector, a back reflector and an active Silicon layer between the front reflector and the back reflector.
Claims15
A backside illuminated semiconductor image sensor that consists essentially of a bulk and a Fabry-Perot resonator, wherein the Fabey-Perot resonator is configured to sense light that passes through the bulk before reaching the Fabey-Perot resonator, wherein the Fabry-Perot resonator is tuned to absorb near infrared radiation;
- and wherein the Fabry-Perot resonator comprises a front reflector, a back reflector and an active Silicon layer between the front reflector and the back reflector.
Dependencies are inferred from the claim text.