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AssigneeCanon Kabushiki Kaisha
InventorsMineo Shimotsusa, Masatsugu Itahashi, Yusuke Onuki, Nobuaki Kakinuma, Masato Fujita
Estimating the term…
A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.
A photoelectric conversion device in which a pixel circuit including a first MOS transistor having a first gate electrode and a second MOS transistor having a second gate electrode is arranged, the photoelectric conversion device comprising:
Dependencies are inferred from the claim text.